2SJ479 데이터 시트보기 (PDF) - Renesas Electronics

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2SJ479

Silicon P Channel MOS FET

Renesas Electronics 

2SJ479(L), 2SJ479(S)

Silicon P Channel MOS FET

Description

High speed power switching

Features

• Low on-resistance

RDS (on) = 25 mΩ typ.

• 4 V gate drive devices.

• High speed switching

REJ03G0866-0300

Rev.3.00

Jun 05, 2006

Outline

RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B

(Package name: LDPAK (L) )

(Package name: LDPAK (S)-(1) )

D

4

4

12

3

123

G

S

1. Gate

2. Drain

3. Source

4. Drain

Rev.3.00 Jun 05, 2006 page 1 of 7

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