2SJ479 데이터 시트보기 (PDF) - Renesas Electronics
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2SJ479 Datasheet PDF : 8 Pages
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2SJ479(L), 2SJ479(S)
Main Characteristics
Power vs. Temperature Derating
100
75
50
25
0
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
–10 V –6 V
–50
Pulse Test
–5 V
–40
–4.5 V
–4 V
–3.5 V
–30
–3 V
–20
–10
VGS = –2.5 V
0
0
–2
–4 –6 –8 –10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–1.0
Pulse Test
–0.8
–0.6
ID = –20 A
–0.4
–10 A
–0.2
–5 A
0
0
–4
–8 –12 –16 –20
Gate to Source Voltage VGS (V)
Rev.3.00 Jun 05, 2006 page 3 of 7
–500
–300
–100
Maximum Safe Operation Area
10 µs
–30
–10
Operation in
–3
this area is
limited by RDS (on)
–1
Ta = 25°C
–0.5
–0.1 –0.3 –1 –3 –10 –30 –100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
–50
Tc = –25°C
–40
25°C
75°C
–30
–20
–10
0
0
VDS = –10 V
Pulse Test
–1 –2 –3 –4 –5
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
0.5
Pulse Test
0.2
0.1
0.05
VGS = –4 V
0.02
–10 V
0.01
–1 –2
–5 –10 –20 –50
Drain Current ID (A)
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