2SK3134L-E 데이터 시트보기 (PDF) - Renesas Electronics
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2SK3134L-E Datasheet PDF : 9 Pages
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2SK3134(L), 2SK3134(S)
Main Characteristics
Power vs. Temperature Derating
160
120
80
40
0
50
100
150
200
Case Temperature TC (°C)
Typical Output Characteristics
100
VGS = 10 V
5V
80
4V
60
Pulse Test
3V
40
20
2.5 V
0
2
4
6
8
10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
0.5
Pulse Test
0.4
0.3
0.2
ID = 50 A
0.1
20 A
10 A
0
4
8
12 16 20
Gate to Source Voltage VGS (V)
Rev.4.00 Sep 07, 2005 page 3 of 8
Maximum Safe Operation Area
1000
300
100
30
10
3
1
Operation in
this area is
10
DPCW(OT=pce1=r0a2mti5os°n1C(1)m1s0sh0otµ) s
µs
limited by RDS(on)
0.3
0.1 Ta = 25°C
0.1 0.3 1 3 10 30 100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
100
VDS = 10 V
80 Pulse Test
60
40
25°C
20
75°C
Tc = –25°C
0
1
2
3
4
5
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Drain Current
100
Pulse Test
30
10
VGS = 4 V
3
10 V
1
0.3
0.1
1 3 10 30 100 300 1000
Drain Current ID (A)
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