Freescale Semiconductor, Inc.
STATIC ELECTRICAL CHARACTERISTICS (continued)
Characteristics noted under conditions 7.0 V ≤ VSUP ≤ 18 V, -40°C ≤ TA ≤ 125°C, GND = 0 V unless otherwise noted. Typical values
noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
LIN BUS TERMINAL (VOLTAGE EXPRESSED VERSUS VSUP VOLTAGE) (continued)
Pullup Resistor to VSUP (Normal Mode)
RPU
20
30
47
kΩ
Pullup Current Source (Sleep Mode)
IPU
–
20
–
µA
Overcurrent Shutdown Threshold
IOV-CUR
50
75
150
mA
Overcurrent Shutdown Delay (Note 4)
IOV-DELAY
–
10
–
µs
Leakage Current to GND
Recessive State, 8.0 V ≤ VSUP ≤ 18 V, 8.0 V ≤ VLIN ≤ 18 V
IBUS-PAS-REC
0
µA
3.0
20
GND Disconnected
VGND = VSUP, VLIN at -18 V
IBUS no GND
- 1.0
–
mA
1.0
Leakage Current to GND
VSUP Disconnected, VLIN at +18 V
IBUS
µA
–
1.0
10
LIN Receiver VIL
TXD High, RXD Low
VLIN-VIL
0
V
–
0.4 VSUP
LIN Receiver VIH
TXD High, RXD High
VLIN-VIH
V
0.6 VSUP
–
VSUP
LIN Receiver Threshold Center
(VLIN-VIH - VLIN-VIL) / 2
VLINTHRES
VSUP
0.475
0.5
0.525
LIN Receiver Input Hysteresis
VLIN-VIH - VLIN-VIL
VLINHYST
–
VSUP
–
0.175
LIN Wake-Up Threshold
VLINWU
–
0.5
–
VSUP
INHIBIT OUTPUT TERMINAL
INH Driver ON Resistance (Normal Mode)
INHON
–
35
70
Ω
Leakage Current (Sleep Mode)
0 < VINH < VSUP
ILEAK
µA
0
–
5.0
WAKE TERMINAL
Typical Wake-Up Threshold (EN = 0 V, 7.0 V ≤ VSUP ≤ 18 V) (Note 5)
HIGH-to-LOW Transition
LOW-to-HIGH Transition
V
VWUTHRESHL 0.3 VSUP 0.43 VSUP 0.55 VSUP
VWUTHRESLH 0.4 VSUP 0.55 VSUP 0.65 VSUP
Wake-Up Threshold Hysteresis
VWUHYST
0.1 VSUP 0.16 VSUP 0.2 VSUP
V
WAKE Input Current
V < 27 V
IWIN1
µA
–
1.0
5.0
Notes
4. This parameter is guaranteed by design; however, it is not production tested.
5. When VSUP > 18 V, the wake-up thresholds remain identical to the wake-up thresholds at 18 V.
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6
MOTOROLA ANALOG INTEGRATED CIRCUIT DEVICE DATA
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