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33661 데이터 시트보기 (PDF) - Motorola => Freescale

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33661
Motorola
Motorola => Freescale Motorola
33661 Datasheet PDF : 20 Pages
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Freescale Semiconductor, Inc.
STATIC ELECTRICAL CHARACTERISTICS (continued)
Characteristics noted under conditions 7.0 V VSUP 18 V, -40°C TA 125°C, GND = 0 V unless otherwise noted. Typical values
noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
LIN BUS TERMINAL (VOLTAGE EXPRESSED VERSUS VSUP VOLTAGE) (continued)
Pullup Resistor to VSUP (Normal Mode)
RPU
20
30
47
k
Pullup Current Source (Sleep Mode)
IPU
20
µA
Overcurrent Shutdown Threshold
IOV-CUR
50
75
150
mA
Overcurrent Shutdown Delay (Note 4)
IOV-DELAY
10
µs
Leakage Current to GND
Recessive State, 8.0 V VSUP 18 V, 8.0 V VLIN 18 V
IBUS-PAS-REC
0
µA
3.0
20
GND Disconnected
VGND = VSUP, VLIN at -18 V
IBUS no GND
- 1.0
mA
1.0
Leakage Current to GND
VSUP Disconnected, VLIN at +18 V
IBUS
µA
1.0
10
LIN Receiver VIL
TXD High, RXD Low
VLIN-VIL
0
V
0.4 VSUP
LIN Receiver VIH
TXD High, RXD High
VLIN-VIH
V
0.6 VSUP
VSUP
LIN Receiver Threshold Center
(VLIN-VIH - VLIN-VIL) / 2
VLINTHRES
VSUP
0.475
0.5
0.525
LIN Receiver Input Hysteresis
VLIN-VIH - VLIN-VIL
VLINHYST
VSUP
0.175
LIN Wake-Up Threshold
VLINWU
0.5
VSUP
INHIBIT OUTPUT TERMINAL
INH Driver ON Resistance (Normal Mode)
INHON
35
70
Leakage Current (Sleep Mode)
0 < VINH < VSUP
ILEAK
µA
0
5.0
WAKE TERMINAL
Typical Wake-Up Threshold (EN = 0 V, 7.0 V VSUP 18 V) (Note 5)
HIGH-to-LOW Transition
LOW-to-HIGH Transition
V
VWUTHRESHL 0.3 VSUP 0.43 VSUP 0.55 VSUP
VWUTHRESLH 0.4 VSUP 0.55 VSUP 0.65 VSUP
Wake-Up Threshold Hysteresis
VWUHYST
0.1 VSUP 0.16 VSUP 0.2 VSUP
V
WAKE Input Current
V < 27 V
IWIN1
µA
1.0
5.0
Notes
4. This parameter is guaranteed by design; however, it is not production tested.
5. When VSUP > 18 V, the wake-up thresholds remain identical to the wake-up thresholds at 18 V.
33661
6
MOTOROLA ANALOG INTEGRATED CIRCUIT DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com

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