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MC33975R2 데이터 시트보기 (PDF) - Freescale Semiconductor

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MC33975R2 Datasheet PDF : 32 Pages
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ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
Table 4. Static Electrical Characteristics (continued)
Characteristics noted under conditions of 3.0 V VDD 5.5 V, 8.0 V VPWR 28 V, -40 C TC 125 C, unless otherwise
noted. Where applicable, typical values reflect the parameter’s approximate average value with VPWR = 13 V, TA = 25 C.
Characteristic
Symbol
Min
Typ
Max
Unit
Input Logic High Voltage Thresholds(11)
Input Logic Low Voltage Thresholds(11)
SCLK, SI, Tri-state SO Input Current
0.0 V to VDD
VIH
0.7 x VDD
VDD + 0.3
V
VIL
GND - 0.3
0.2 x VDD
V
ISCLK, ISI,
A
ISO(TRI)
-10
10
CS Input Current
CS = VDD
ICS
A
-10
10
CS Pull-up Current
CS = 0.0 V
ICS
A
30
100
SO High State Output Voltage
ISO(HIGH) = -200 A
VSO(HIGH)
VDD - 0.8
V
VDD
SO Low State Output Voltage
ISO(HIGH) = 1.6 mA
Input Capacitance on SCLK, SI, Tri-state SO(12)
INT Internal Pull-up Current
VSO(LOW)
CIN
15
V
0.4
20
pF
40
100
A
INT Voltage
INT = Open Circuit
V INT (HIGH)
VDD - 0.5
V
VDD
INT Voltage
IINT = 1.0 mA
V INT (LOW)
V
0.2
0.4
WAKE Internal Pull-Up current
WAKE Voltage
WAKE = Open Circuit
I WAKE (PU)
20
40
100
A
V WAKE (HIGH)
V
4.0
4.3
5.3
WAKE Voltage
IWAKE = 1.0 mA
WAKE Voltage(12)
Maximum Voltage Applied to WAKE Through External Pull-up
V WAKE(LOW)
V WAKE(MAX)
V
0.2
0.4
V
40
Notes
11. Upper and lower logic threshold voltage levels apply to SI, CS, and SCLK.
12. This parameter is guaranteed by design however, is not production tested.
DYNAMIC ELECTRICAL CHARACTERISTICS
Table 5. Dynamic Electrical Characteristics
Characteristics noted under conditions of 3.0V VDD 5.5V, 8.0V VPWR 28V, -40C TC 125C, unless otherwise noted.
Where applicable, typical values reflect the parameter’s approximate average value with VPWR = 13 V, TA = 25C.
Characteristic
Symbol
Min
Typ
Max
Unit
SWITCH INPUT
Analog Integrated Circuit Device Data
Freescale Semiconductor
33975
9

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