5962F9683201VCA 데이터 시트보기 (PDF) - Intersil
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5962F9683201VCA Datasheet PDF : 4 Pages
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Die Characteristics
DIE DIMENSIONS:
69 mils x 92 mils x 19 mils ±1 mil
1750 x 2330 x 355µm ±25.4µm
INTERFACE MATERIALS:
Glassivation:
Type: Nitride
Thickness: 4kÅ ±0.5kÅ
Top Metallization:
Type: Metal 1: AICu(2%)/TiW
Type: Metal 2: AICu(2%)
Thickness: Metal 1: 8kÅ ±0.4kÅ
Thickness: Metal 2: 16kÅ ±0.8kÅ
Substrate:
UHF-1X, Bonded Wafer, DI
Backside Finish:
Silicon
Metallization Mask Layout
HS-1245RH
ASSEMBLY RELATED INFORMATION:
Substrate Potential (Powered Up):
Floating
ADDITIONAL INFORMATION:
Worst Case Current Density:
< 2 x 105 A/cm2
Transistor Count:
150
HS-1245RH
-IN1
OUT1 GND (NOTE)
V+
+IN1
NC
DISABLE1
V-
DISABLE2
NC
+IN2
OUT2
V-
VL
-IN2
V-
NOTE: This is an optional GND pad. Users may set a GND reference, via this pad, to ensure the TTL compatibility of the DISABLE inputs when
using asymmetrical supplies (e.g., V+ = 10V, V- = 0V). See the “Application Information” section for details.
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
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