5N90G(2010) 데이터 시트보기 (PDF) - Unisonic Technologies
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5N90G Datasheet PDF : 6 Pages
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5N90
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
900
V
Gate-Source Voltage
VGSS
±30
V
Drain Current
Continuous
ID
Pulsed (Note 1)
IDM
5
A
12
A
Avalanche Energy
Single Pulsed (Note 2)
EAS
Repetitive (Note 1)
EAR
660
mJ
5.1
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.0
V/ns
Power Dissipation
TO-220
TO-220F
125
W
PD
38
W
Junction Temperature
TJ
+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Ambient
TO-220
TO-220F
Junction to Case
TO-220
TO-220F
SYMBOL
θJA
θJC
RATINGS
62.5
62.5
1
3.25
UNIT
°C/W
°C/W
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-499.a
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