74AHC1G06_07 데이터 시트보기 (PDF) - NXP Semiconductors.
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74AHC1G06_07 Datasheet PDF : 11 Pages
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NXP Semiconductors
74AHC1G06; 74AHCT1G06
Inverter with open-drain output
11. Dynamic characteristics
Table 8. Dynamic characteristics
GND = 0 V; tr = tf = ≤ 3.0 ns. For test circuit see Figure 6.
Symbol Parameter Conditions
25 °C
−40 °C to +85 °C −40 °C to +125 °C Unit
Min Typ Max Min Max
Min
Max
For type 74AHC1G06
tPZL
OFF-state A to Y; see Figure 5
to LOW
propagation
VCC = 3.0 V to 3.6 V [1]
delay
CL = 15 pF
- 3.7 7.0 1.0
7.7
1.0
8.1 ns
CL = 50 pF
- 5.2 10.0 1.0
11.0
1.0
11.5 ns
VCC = 4.5 V to 5.5 V [2]
CL = 15 pF
- 2.7 4.9 1.0
5.3
1.0
5.6 ns
CL = 50 pF
- 3.8 7.0 1.0
7.5
1.0
8.0 ns
tPLZ
LOW to
A to Y; see Figure 5
OFF-state
propagation
VCC = 3.0 V to 3.6 V [1]
delay
CL = 15 pF
- 4.8 6.4 1.0
6.9
1.0
7.4 ns
CL = 50 pF
- 6.9 10.0 1.0
10.5
1.0
11.0 ns
VCC = 4.5 V to 5.5 V [2]
CL = 15 pF
- 3.0 4.1 1.0
4.6
1.0
5.1 ns
CL = 50 pF
- 4.3 6.5 1.0
7.0
1.0
7.5 ns
CPD
power
per buffer;
[3] -
3
-
-
-
-
-
pF
dissipation CL = 50 pF; f = 1 MHz;
capacitance VI = GND to VCC
For type 74AHCT1G06
tPZL
OFF-state A to Y; see Figure 5
to LOW
propagation
VCC = 4.5 V to 5.5 V [2]
delay
CL = 15 pF
- 3.0 5.3 1.0
6.0
1.0
6.3 ns
CL = 50 pF
- 4.2 7.5 1.0
8.5
1.0
9.0 ns
tPLZ
LOW to
A to Y; see Figure 5
OFF-state
propagation
VCC = 4.5 V to 5.5 V [2]
delay
CL = 15 pF
- 3.2 4.6 1.0
5.1
1.0
5.6 ns
CL = 50 pF
- 4.5 7.0 1.0
7.5
1.0
8.0 ns
CPD
power
per buffer;
[3] -
4.5
-
-
-
-
-
pF
dissipation CL = 50 pF; f = 1 MHz;
capacitance VI = GND to VCC
[1] Typical values are measured at VCC = 3.3 V.
[2] Typical values are measured at VCC = 5.0 V.
[3] CPD is used to determine the dynamic power dissipation PD (µW).
PD = CPD × VCC2 × fi + ∑ (CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts
74AHC_AHCT1G06_6
Product data sheet
Rev. 06 — 7 June 2007
© NXP B.V. 2007. All rights reserved.
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