AS58C1001(2001) 데이터 시트보기 (PDF) - Austin Semiconductor

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AS58C1001
(Rev.:2001)

128K x 8 EEPROM EEPROM Memory

Austin Semiconductor 

Austin Semiconductor, Inc.

EEPROM

AS58C1001

FUNCTIONAL DESCRIPTION

AUTOMATIC PAGE WRITE

The Page Write feature allows 1 to 128 Bytes of data to

be written into the EEPROM in a single cycle and allows the

undefined data within 128 Bytes to be written corresponding

to the undefined address (A0 to A6). Loading the first Byte of

data, the data load window of 30µs opens for the second. In

the same manner each additional Byte of data can be loaded

within 30µs. In case CE\ and WE\ are kept high for 100µs

after data input, the EEPROM enters erase and write

automatically and only the input data can be written into the

EEPROM. In Page mode the data can be written and accessed

104 times per page, and in Byte mode 103 times per Byte.

DATA\ POLLING

Data\ Polling allows the status of the EEPROM to be

determined. If the EEPROM is set to Read mode during a

Write cycle, and inversion of the last Byte of data to be loaded

outputs from I/O, to indicate that the EEPROM is performing

a Write operation.

PROGRAMMING/ERASE

The 58C1001 does NOT employ a BULK-erase function.

The memory cells can be programmed ‘0’ or ‘1’. A write cycle

performs the function of erase & write on every cycle with

the erase being transparent to the user. The internal erase data

state is considered to be ‘1’. To program the memory array

with background of ALL 0’s or All 1’s, the user would

program this data using the page mode write operation to

program all 1024 128-byte pages.

DATA PROTECTION

To protect the data during operation and power on/off,

the AS58C1001 has:

1. Data protection against Noise on Control Pins (CE\,

OE\, WE\) during Operation. During readout or standby, noise

on the control pins may act as a trigger and turn the EEPROM

to programming mode by mistake. To prevent this phenom-

enon, the AS58C1001 has a noise cancellation function that

cuts noise if its width is 20ns or less in programming mode.

Be careful not to allow noise of a width of more than 20ns on

the control pins.

WRITE PROTECTION

(1) Noise protection: Noise on a write cycle will not act

as a trigger with a WE\ pulse of less than 20ns.

(2) Write inhibit: Holding OE\ low, WE\ high or CE\

high, inhibits a write cycle during power on/off.

WE\ AND CE\ PIN OPERATION

During a write cycle, addresses are latched by the falling

edge of WE\ or CE\, and data is latched by the rising edge of

WE\ or CE\.

WRITE/ERASE ENDURANCE AND

DATA RETENTION

The endurance with page programming is 104 cycles (1%

cumulative failure rate) and the data retention time is more

than 10 years when a device is programmed less than 104

cycles.

RDY/Busy\ SIGNAL

RDY/Busy\ signal also allows status of the EEPROM to

be determined. The RDY/Busy\ signal has high impedance

except in write cycle and is lowered to VOL after the first write

signal. At the end of the write cycle, the RDY/Busy\ signal

changes state to high impedance. This allows many 58C1001

devices RDY/Busy\ signal lines to be wired-OR together.

AS58C1001

Rev. 4.0 3/01

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

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