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ASD723SN 데이터 시트보기 (PDF) - Cystech Electonics Corp.

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ASD723SN
CYSTEKEC
Cystech Electonics Corp. CYSTEKEC
ASD723SN Datasheet PDF : 4 Pages
1 2 3 4
CYStech Electronics Corp.
Advanced Schottky Barrier Diodes
ASD723SN
Spec. No. : C343SN
Issued Date : 2003.08.19
Revised Date :2003.12.05
Page No. : 1/4
Features:
Designed for mounting on small surface
Low stored charge
Majority carrier conduction
Mechanical data:
Case: 0805(2012) Standard package, molded plastic
Terminals : Solder plated, solderable per MIL-STD-750, method 2026.
Polarity: Indicated by cathode band
Mounting position: Any
Weight: 4.8mg (approximately)
Absolute Maximum Ratings(Ta=25)
Characteristics
Symbol
Value
Unit
Continuous Reverse Voltage
VR
30
V
Average Rectified Current
IO
200
mA
Forward Surge Current @ 8.3ms single half sine-wave
superimposed on rated load(JEDEC method)
IFSM
1.5
A
Capacitance between Terminals @ f=1MHz and applied
10VDC Reverse Voltage
CT
20
pF
Junction Temperature
Tj
-40 to +125
°C
Storage Temperature Range
Tstg
-40 to +125
°C
Electrical Characteristics ( TA=25°C, unless otherwise noted)
Parameter
Forward Voltage
Reverse Current
Condition
IF = 200mADC
VR = 30VDC
Symbol Min Typ Max Unit
VF
- - 0.55 V
IR
- - 15 µA
ASD723SN
CYStek Product Specification

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