AT-41400 데이터 시트보기 (PDF) - HP => Agilent Technologies
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AT-41400 Datasheet PDF : 5 Pages
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AT-41400 Absolute Maximum Ratings
Symbol
VEBO
VCBO
VCEO
IC
PT
Tj
TSTG
Parameter
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation [2,3]
Junction Temperature
Storage Temperature
Units
V
V
V
mA
mW
°C
°C
Absolute
Maximum[1]
1.5
20
12
60
500
200
-65 to 200
Part Number Ordering Information
Part Number
Devices Per Tray
AT-41400-GP4
100
Note: For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
Thermal Resistance[2,4]:
θjc = 95°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TMOUNTING SURFACE = 25°C.
3. Derate at 10.5 mW/°C for
TMOUNTING SURFACE > 153°C.
4. The small spot size of this tech-
nique results in a higher, though
more accurate determination of θjc
than do alternate methods. See
MEASUREMENTS section
“Thermal Resistance” for more
information.
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions[1]
|S21E|2 Insertion Power Gain; VCE = 8 V, IC = 25 mA
Units Min. Typ. Max.
f = 2.0 GHz dB
12.0
f = 4.0 GHz
6.5
P1 dB
Power Output @ 1 dB Gain Compression
VCE = 8 V, IC = 25 mA
f = 2.0 GHz dBm
19.0
f= 4.0 GHz
18.5
G1 dB 1 dB Compressed Gain; VCE = 8 V, IC = 25 mA
f = 2.0 GHz dB
15.0
f = 4.0 GHz
10.5
NFO Optimum Noise Figure: VCE = 8 V, IC = 10 mA
f = 1.0 GHz dB
1.3
f = 2.0 GHz
1.6
f = 4.0 GHz
3.0
GA
Gain @ NFO; VCE = 8 V, IC = 10 mA
f = 1.0 GHz dB
18.5
f = 2.0 GHz
14.5
f = 4.0 GHz
10.5
fT
Gain Bandwidth Product: VCE = 8 V, IC = 25 mA
hFE
Forward Current Transfer Ratio; VCE = 8 V, IC = 10 mA
ICBO Collector Cutoff Current; VCB = 8 V
IEBO Emitter Cutoff Current; VEB = 1 V
CCB
Collector Base Capacitance[2]: VCB = 8 V, f = 1 MHz
GHz
9.0
— 30 150 300
µA
0.2
µA
1.0
pF
0.17
Notes:
1. RF performance is determined by packaging and testing 10 devices per wafer.
2. For this test, the emitter is grounded.
4-100
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