GS840E18B-100 데이터 시트보기 (PDF) - Giga Semiconductor

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GS840E18B-100

256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs

Giga Semiconductor 

GS840E18/32/36T/B-180/166/150/100

Operating Currents

Parameter Test Conditions

Symbol

-180

0 to -40 to

70°C 85°C

-166

0 to -40 to

70°C 85°C

-150

0 to -40 to

70°C 85°C

-100

0 to -40 to

70°C 85°C

Operating

Current

Device Selected;

All other inputs

≥VIH or ≤ VIL

Output open

IDD

Pipeline

330mA 340mA 310mA 320mA 275mA 285mA 190mA 200mA

IDD

Flow-Thru

190mA

200mA

190mA

200mA

190mA

200mA

140mA

150mA

Standby

Current

ZZ ≥ VDD - 0.2V

ISB

Pipeline

ISB

Flow-Thru

30mA

30mA

40mA

40mA

30mA

30mA

40mA

40mA

30mA

30mA

40mA

40mA

30mA

30mA

40mA

40mA

Deselect

Current

Device Deselected;

All other inputs

≥ VIH or ≤ VIL

IDD

Pipeline

120mA 130mA 110mA 120mA 105mA 115mA

IDD

Flow-Thru

80mA

90mA

80mA

90mA

80mA

90mA

80mA

65mA

90mA

75mA

Rev: 2.05 6/2000

18/31

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com

© 1999, Giga Semiconductor, Inc.

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