BD6524HFV 데이터 시트보기 (PDF) - ROHM Semiconductor
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BD6524HFV Datasheet PDF : 10 Pages
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BD6524HFV
Technical Note
●Electrical characteristics
Unless otherwise specified, Ta = 25℃, VIN = 5V,
Parameter
Symbol
Min.
Limits
Typ.
Operating current
IDD
-
50
Standby current
ISTB
-
0.1
Max.
75
1
EN input voltage
EN input leak current
VENH
VENL
IEN
-
-
2.5
0.7
-
-
-1
0.01
1
Switch on resistance
Switch leak current
RON
ILEAK
-
200 255
-
250 335
-
-
10
Switch rise time
TON1
-
0.4
0.8
Switch rise delay time
TON2
-
0.5
1.0
Switch fall time
TOFF1
-
1
2
Switch fall delay time
TOFF2
-
2
4
UVLO threshold voltage VUVLO
1.9
1.8
2.2
2.1
2.5
2.4
Discharge resistance
Discharge current
RDISC
-
200 350
IDISC
0.8
1.8
-
Unit
Condition
µA VEN = 5V, VOUT = Open
µA VEN = 0V, VOUT = Open
V High level input voltage
V Low level input voltage
µA
mΩ VIN = 5V
mΩ VIN = 3.3V
µA At switch OFF
ms RL=10Ω. Refer to the timing diagram in Fig. 2.
ms RL=10Ω. Refer to the timing diagram in Fig. 2.
us RL=10Ω. Refer to the timing diagram in Fig. 2.
us RL=10Ω. Refer to the timing diagram in Fig. 2.
V VIN increasing
V VIN decreasing
Ω VEN = 0V, IL = 1mA
mA VEN = 0V,VIN = VOUT = 1.8V
●Measurement circuit
●Timing diagram
VIN
VOUT
VIN
VOUT
EN
GND
RL CL
Fig.1 Measurement circuit
VOUT
TON1
90%
10%
TOFF1
90%
10%
VEN
TON2
TOFF2
50%
50%
Fig.2 Timing diagram
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2/9
2011.06 - Rev.C
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