BFE505 데이터 시트보기 (PDF) - Philips Electronics
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BFE505 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN wideband differential transistor
Product specification
BFE505
FEATURES
• Small size
• High power gain at low bias current and voltage
• Temperature matched
• Balanced configuration
• hFE matched
• Continues to operate at VCE < 1 V.
PINNING - SOT353B
SYMBOL
PIN
b1
1
e
2
b2
3
c2
4
c1
5
DESCRIPTION
base 1
emitter
base 2
collector 2
collector 1
APPLICATIONS
• Single balanced mixers
• Balanced amplifiers
• Balanced oscillators.
DESCRIPTION
Emitter coupled dual NPN silicon RF transistor in a surface
mount, 5-pin SOT353 (S-mini) package. The transistor is
primarily intended for applications in the RF front end as a
balanced mixer, a differential amplifier in analog and digital
cellular phones, and in cordless phones, pagers and
satellite TV-tuners.
321
handbook, halfpage
4
5
Top view
c1
c2
b1
b2
e
MAM211
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
Any single transistor
Cre
feedback capacitance CBC
MSG/Gmax maximum power gain
F
noise figure
hFE
Rth j-s
DC current gain
thermal resistance from
junction to soldering point
CONDITIONS
Ie = 0; VCB = 3 V; f = 1 MHz
IC = 5 mA; VCE = 3 V; f = 900 MHz
IC = 5 mA; VCE = 3 V; f = 2 GHz
IC = 2 mA; VCE = 3 V; f = 900 MHz;
ΓS = Γopt
IC = 3 mA; VCE = 3 V; f = 2 GHz;
ΓS = Γopt
IC = 5 mA; VCE = 3 V
single loaded
double loaded
MIN. TYP. MAX. UNIT
−
0.25 0.3 pF
−
17
−
dB
−
10
−
dB
−
1.2 1.7 dB
−
1.9 2.1 dB
60
120 250
−
−
230 K/W
−
−
115 K/W
1996 Oct 08
2
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