BFE505 데이터 시트보기 (PDF) - Philips Electronics

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BFE505

NPN wideband differential transistor

Philips Electronics 

Philips Semiconductors

NPN wideband differential transistor

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

Any single transistor

VCBO

VCEO

VEBO

IC

Ptot

Tstg

Tj

collector-base voltage

collector-emitter voltage

emitter-base voltage

DC collector current

total power dissipation

storage temperature

operating junction temperature

open emitter

open base

open collector

up to Ts = 118 °C; note 1

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-s

thermal resistance from junction

to soldering point; note 1

CONDITIONS

single loaded

double loaded

Note to the Limiting values and Thermal characteristics

1. Ts is the temperature at the soldering point of the collector pin.

Product specification

BFE505

MIN. MAX. UNIT

−

20

V

−

8

V

−

2.5 V

−

18

mA

−

500 mW

−65 +175 °C

−

175 °C

VALUE

230

115

UNIT

K/W

K/W

1996 Oct 08

3

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