BFE505 데이터 시트보기 (PDF) - Philips Electronics

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BFE505

NPN wideband differential transistor

Philips Electronics 

Philips Semiconductors

NPN wideband differential transistor

Product specification

BFE505

APPLICATION INFORMATION

SPICE parameters for any single BFE505 die

SEQUENCE No.

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

19(1)

20(1)

21(1)

22

23

24

25

26

27

28

29

30

31

32

33

34

35(1)

36(1)

37(1)

38

PARAMETER

IS

BF

NF

VAF

IKF

ISE

NE

BR

NR

VAR

IKR

ISC

NC

RB

IRB

RBM

RE

RC

XTB

EG

XTI

CJE

VJE

MJE

TF

XTF

VTF

ITF

PTF

CJC

VJC

MJC

XCJC

TR

CJS

VJS

MJS

FC

VALUE UNIT

134.1 aA

180.0 −

0.988 −

38.34 V

150.0 mA

27.81 fA

2.051 −

55.19 −

0.982 −

2.459 V

2.920 mA

17.45 aA

1.062 −

20.00 Ω

1.000 µA

20.00 Ω

1.171 Ω

4.350 Ω

0.000 −

1.110 eV

3.000 −

284.7 fF

600.0 mV

0.303 −

7.037 ps

12.34 −

1.701 V

30.64 mA

0.000 deg

242.4 fF

188.6 mV

0.041 −

0.130 −

1.332 ns

0.000 F

750.0 mV

0.000 −

0.897 −

Note

1. These parameters have not been extracted, the

default values are shown.

handbook, halfpage

C1

LP

C2

LP

B1

LB

T1

T2

B2

LB

LE

LE

LP

E

MBG190

Fig.2 Package equivalent circuit SOT353B

(inductance only).

Lead inductances (nH)

LP

0.4

LB

0.8

LE

0.6

E 35

B2 3.5 35

C2 2 35 36

C1 36 35 2 15

B1

E

B2 C2

MBG191

Fig.3 Package capacitance (fF) between

indicated nodes.

1996 Oct 08

5

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