BLW76 데이터 시트보기 (PDF) - Philips Electronics
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BLW76 Datasheet PDF : 15 Pages
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Philips Semiconductors
HF/VHF power transistor
Product specification
BLW76
R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit); Th = 25 °C
f (MHz)
108
VCE (V) PL (W)
28
80
PS (W)
typ. 13
Gp (dB)
typ. 7,9
IC (A)
typ. 4,1
η (%)
typ. 70
zi (Ω)
0,85 + j1,0
YL (mS)
174 − j40
handbook, full pagewidth
50 Ω
C1
,, L1
L2
L5
,,,, T.U.T.
L8
C7ab
C8
C9
C2 C3
C4ab
L6
L4
L3
R1
C6 R2
C5
L7
50 Ω
C10 C11
+VCC
Fig.16 Test circuit; c.w. class-B.
MGP513
List of components:
C1 = C9 = C10 = 4 to 40 pF film dielectric trimmer (cat. no. 2222 809 07008)
C2 = 5 to 60 pF film dielectric trimmer (cat. no. 2222 809 07011)
C3 = 22 pF ceramic capacitor (500 V)
C4ab = 2 × 82 pF ceramic capacitors in parallel (500 V)
C5 = 270 pF polystyrene capacitor
C6 = 100 nF polyester capacitor
C7a = 8,2 pF ceramic capacitor (500 V)
C7b = 10 pF ceramic capacitor (500 V)
C 8 = 5,6 pF ceramic capacitor (500 V)
C11 = 10 pF ceramic capacitor (500 V)
L1
= 21 nH; 2 turns Cu wire (1,0 mm); int. dia. 4,0 mm; length 3,5 mm; leads 2 × 5 mm
L2
= L5 = 2,4 nH; strip (12 mm × 6 mm); tap for L4 at 6 mm from transistor
L3
= L7 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
L4
= 100 nH; 7 turns closely wound enamelled Cu wire (0,5 mm); int. dia. 3 mm; leads 2 × 5 mm
L6
= 49 nH; 2 turns Cu wire (1,6 mm); int. dia. 9,0 mm; length 4,7 mm; leads 2 × 5 mm
L8
= 56 nH; 2 turns Cu wire (1,6 mm); int. dia. 10,0 mm; length 4,5 mm; leads 2 × 5 mm
L2 and L5 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric.
R1 = R2 = 10 Ω (± 10%) carbon resistor
Component layout and printed-circuit board for 108 MHz test circuit are shown in Fig.17.
August 1986
10
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