BLW76 데이터 시트보기 (PDF) - Philips Electronics

부품명

상세내역

제조사

BLW76

HF/VHF power transistor

Philips Electronics 

Philips Semiconductors

HF/VHF power transistor

Product specification

BLW76

handbook,4h0alfpage

Gp

(dB)

30

MGP510

20

10

0

1

10

f (MHz)

102

VCE = 28 V; IC(ZS) = 50 mA; PL = 80 W; Th = 25 °C;

ZL = 3,9 Ω; neutralizing capacitor: 68 pF.

Fig.13 Power gain as a function of frequency.

handbook,2h0alfpage

ri

(Ω)

15

10

MGP511 2.5

xi

(Ω)

0

xi

−2.5

5

−5

ri

0

−7.5

1

10

f (MHz)

102

VCE = 28 V; IC(ZS) = 50 mA; PL = 80 W; Th = 25 °C;

ZL = 3,9 Ω; neutralizing capacitor: 68 pF.

Fig.14 Input impedance (series components) as a

function of frequency.

Figs 13 and 14 are typical curves and hold for a push-pull

amplifier with cross-neutralization in s.s.b. class-AB

operation.

150

handbook, halfpage

PLnom

(W P.E.P.)

(VSWR = 1)

100

MGP512

Th ≤ 50 °C

70 °C

90 °C

50

1

10

VSWR

102

The graph shows the permissible output

power under nominal conditions (VSWR = 1)

as a function of the expected VSWR during

short-time mismatch conditions with heatsink

temperatures as parameter.

Fig.15 R.F. SOAR; s.s.b. class-AB operation;

f1 = 28,000 MHz; f2 = 28,001 MHz;

VCE = 28 V; Rth mb-h = 0,2 K/W.

August 1986

9

Share Link: