BRT21 데이터 시트보기 (PDF) - Vishay Semiconductors
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BRT21 Datasheet PDF : 9 Pages
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BRT21/ 22/ 23
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Forward voltage
Reverse current
Capacitance
Thermal resistance, junction to
ambient
Test condition
IF = 10 mA
VR = 6.0 V
VF = 0 V, f = 1.0 MHz
Symbol
Min
Typ.
Max
Unit
VF
1.16
1.35
V
IR
0.1
10
µA
CO
25
pF
Rthja
750
K/W
Output
Parameter
Test condition
Symbol
Min
Typ.
Off-state voltage
ID(RMS) = 70 µA
VD(RMS)
424
460
Repetitive peak off-state voltage IDRM = 100 µA
VDRM
600
Off-state current
VD = VDRM, Tamb = 100 °C,
ID(RMS)
10
IF = 0 mA
On-state voltage
IT = 300 mA
VTM
1.7
On-state current
PF = 1.0, VT(RMS) = 1.7 V
ITM
Surge (non-repetitive), on-state f = 50 Hz
ITSM
current
Trigger current temp. gradient
∆IFT1/∆Tj
7.0
∆IFT2/∆Tj
7.0
Inhibit voltage temp. gradient
∆VDINH/∆Tj
-20
Off-state current in inhibit state IF = IFT1, VDRM
IDINH
50
Holding current
IH
65
Latching current
VT = 2.2 V
IL
5.0
Zero cross inhibit voltage
IF = Rated IFT
VIH
15
Turn-on time
VRM = VDM = VD(RMS)
ton
35
Turn-off time
PF = 1.0, IT = 300 mA
toff
50
Critical rate of rise of off-state VD = 0.67 VDRM, TJ = 25 °C
voltage
dv/dtcr
10000
VD = 0.67 VDRM, TJ = 80 °C
dv/dtcr
5000
Critical rate of rise of voltage at VD = 0.67 VDRM,
current commutation
di/dtcrq ≤ 15 A/ms, Tj = 25 °C
dv/dtcrq
10000
VD = 0.67 VDRM,
di/dtcrq ≤ 15 A/ms, Tj = 80 °C
dv/dtcrq
5000
Critical rate of rise of on-state
di/dtcr
8.0
Thermal resistance, junction to
ambient
Rthja
125
Max
Unit
V
V
100
µA
3.0
V
300
mA
3.0
A
14
µA/K
14
µA/K
mV/K
200
µA
500
µA
mA
25
V
µs
µs
V/µs
V/µs
V/µs
V/µs
A/µs
K/W
Document Number 83690
Rev. 1.4, 10-Jan-05
www.vishay.com
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