BSC0908NS 데이터 시트보기 (PDF) - Infineon Technologies

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BSC0908NS

n-Channel Power MOSFET

Infineon Technologies 

Table 12

9 Drain-source on-state resistance

OptiMOS™ Power-MOSFET

BSC0908NS

Electrical characteristics diagrams

10 Typ. gate threshold voltage

RDS(on)=f(Tj); ID=30 A; VGS=10 V

Table 13

11 Typ. capacitances

VGS(th)=f(Tj); VGS=VDS; ID=250 µA

12 Forward characteristics of reverse diode

C=f(VDS); VGS=0 V; f=1 MHz

Final Data Sheet

IF=f(VSD); parameter: Tj

7

3.1, 2010-10-18

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