BSP315P(1999) 데이터 시트보기 (PDF) - Infineon Technologies

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BSP315P
(Rev.:1999)

SIPMOS® Small-Signal-Transistor

Infineon Technologies 

Preliminary data

BSP 315 P

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

Dynamic Characteristics

Transconductance

VDS≤2*ID*RDS(on)max , ID = -0.89 A

Input capacitance

VGS = 0 V, VDS = -25 V, f = 1 MHz

Output capacitance

VGS = 0 V, VDS = -25 V, f = 1 MHz

Reverse transfer capacitance

VGS = 0 V, VDS = -25 V, f = 1 MHz

Turn-on delay time

VDD = -30 V, VGS = -4.5 V, ID = -0.89 A,

RG = 18 Ω

Rise time

VDD = -30 V, VGS = -4.5 V, ID = -0.89 A,

RG = 18 Ω

Turn-off delay time

VDD = -30 V, VGS = -4.5 V, ID = -0.89 A,

RG = 18 Ω

Fall time

VDD = -30 V, VGS = -4.5 V, ID = -0.89 A,

RG = 18 Ω

gfs

Ciss

Coss

Crss

td(on)

0.7 1.4

-S

- 130 160 pF

-

40 50

-

17 21

-

24 36 ns

tr

-

9

14

td(off)

-

32 48

tf

-

19 28

Page 3

1999-09-14

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