BSP315P(1999) 데이터 시트보기 (PDF) - Infineon Technologies

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BSP315P
(Rev.:1999)

SIPMOS® Small-Signal-Transistor

Infineon Technologies 

Preliminary data

BSP 315 P

Drain-source on-resistance

RDS(on) = f (Tj)

parameter:ID = -1.17 A, VGS = -10 V

BSP 315 P

2.1

Ω

1.8

1.6

1.4

1.2

1.0

98%

0.8

typ

0.6

0.4

0.2

0.0

-60 -20 20

60 100

Typ. capacitances

C = f(VDS)

Parameter: VGS=0 V, f=1 MHz

10 3

°C

180

Tj

Gate threshold voltage

VGS(th) = f (Tj)

parameter: VGS = VDS, ID = -160 µA

-3.0

V

98%

-2.0

typ

-1.5

2%

-1.0

-0.5

0.0

-60

-20

20

60

100 °C 160

Tj

Forward characteristics of reverse diode

IF = f (VSD)

parameter: Tj , tp = 80 µs

-10 1 BSP 315 P

pF

A

Ciss

10 2

-10 0

Coss

10 1

10 0

0

Crss

-10 -1

Tj = 25 °C typ

Tj = 150 °C typ

Tj = 25 °C (98%)

Tj = 150 °C (98%)

-5 -10 -15 -20 -25 -30 V -40

VDS

-10 -2

0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0

VSD

Page 7

1999-09-14

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