BYQ60EW-200 데이터 시트보기 (PDF) - Philips Electronics
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BYQ60EW-200 Datasheet PDF : 6 Pages
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Philips Semiconductors
Rectifier diodes
ultrafast, rugged
Product specification
BYQ60EW series
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-mb
Rth j-a
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
per diode
both diodes conducting
in free air
MIN.
-
-
-
TYP.
-
-
45
MAX.
0.85
0.6
-
UNIT
K/W
K/W
K/W
ELECTRICAL CHARACTERISTICS
characteristics arre per diode at Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
VF
Forward voltage
IF = 30 A; Tj = 150˚C
IF = 30 A
IF = 60 A
IR
Reverse current
VR = VRWM
VR = VRWM; Tj = 100 ˚C
Qs
Reverse recovery charge
IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs
trr
Reverse recovery time
IF = 1 A; VR ≥ 30 V;
-dIF/dt = 100 A/µs
Vfr
Forward recovery voltage
IF = 1 A; dIF/dt = 10 A/µs
MIN.
-
-
-
-
-
-
-
-
TYP.
0.73
0.95
1.07
10
1
10
27
0.7
MAX.
0.85
1.1
1.2
200
2
20
35
UNIT
V
V
V
µA
mA
nC
ns
-
V
December 1998
2
Rev 1.000
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