BZG04 데이터 시트보기 (PDF) - Philips Electronics
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BZG04 Datasheet PDF : 7 Pages
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Philips Semiconductors
Transient voltage suppressor diodes
Preliminary specification
BZG04 series
TYPE
NUMBER
BZG04-110
BZG04-120
BZG04-130
BZG04-150
BZG04-160
BZG04-180
BZG04-200
BZG04-220
REVERSE
BREAKDOWN
VOLTAGE
V(BR)R (V)
at Itest
MIN.
124
138
153
168
188
208
228
251
TEMPERATURE
COEFFICIENT
SZ (%/K) at Itest
MIN.
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
MAX.
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
TEST
CURRENT
CLAMPING
VOLTAGE
REVERSE CURRENT
at STAND-OFF
VOLTAGE
Itest
(mA)
5
5
5
5
5
2
2
2
V(CL)R (V) at IRSM (A)
note 1
MAX.
185
1.6
204
1.5
224
1.3
249
1.2
276
1.1
305
1.0
336
0.9
380
0.8
IR (µA)
MAX.
5
5
5
5
5
5
5
5
at VR
(V)
110
120
130
150
160
180
200
220
Note
1. Non-repetitive peak reverse current in accordance with “IEC 60-1, Section 8” (10/1000 µs pulse); see Fig.4.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-tp
Rth j-a
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
CONDITIONS
note 1
note 2
VALUE
25
100
150
UNIT
K/W
K/W
K/W
Notes
1. Device mounted on an Al2O3 printed-circuit board, 0.7 mm thick; thickness of Cu-layer ≥35 µm, see Fig.5.
2. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.5.
For more information please refer to the “General Part of associated Handbook”.
1996 Sep 19
4
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