CXK77B3610GB 데이터 시트보기 (PDF) - Sony Semiconductor

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CXK77B3610GB

High Speed Bi-CMOS Synchronous Static RAM

Sony Semiconductor 

Register-Register mode

Timing waveform of READ-WRITE-READ CYCLE I (S controlled)

K

K

A0 to 14

N

S

W/BWx

N+2

N+3

CXK77B3610GB

N+4

N+5

G = VIL

DQ0 to 35

Qn – 1

Reed N

Qn

Deselect

(Hi-Z)

Dn + 2

Write N + 2

Reed N + 3

Qn + 3

Timing waveform of READ-WRITE-READ CYCLE II (G controlled)

K

K

A0 to 14

N

S = VIL

W/BWx

G

DQ0 to 35

Qn – 1

Reed N

N+2

N+3

N+4

N+5

Qn

Dn + 2

Hi-Z;

Write N + 2

Reed N + 3

–8–

Qn + 3

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