CY7C1049DV33(2006) 데이터 시트보기 (PDF) - Cypress Semiconductor

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CY7C1049DV33
(Rev.:2006)

4-Mbit (512K x 8) Static RAM

Cypress Semiconductor 

CY7C1049DV33

Document History Page

Document Title: CY7C1049DV33 4-Mbit (512K x 8) Static RAM

Document Number: 38-05475

REV.

Orig. of

ECN NO. Issue Date Change

Description of Change

**

201560 See ECN

SWI Advance Data sheet for C9 IPP

*A

233729 See ECN SYT 1.AC, DC parameters are modified as per EROS(Spec # 01-2165)

2.Pb-free offering in the ‘ordering information’

*B

351096 See ECN

PCI Changed from Advance to Preliminary

Removed 20 ns Speed bin

Corrected DC voltage (min) value in maximum ratings section from - 0.5 to

- 0.3V

Redefined ICC values for Com’l and Ind’l temperature ranges

ICC (Com’l): Changed from 100, 80 and 67 mA to 90, 80 and 75 mA for 8, 10

and 12ns speed bins respectively

ICC (Ind’l): Changed from 80 and 67 mA to 90 and 85 mA for 10 and 12ns

speed bins respectively

Added VIH(max) spec in Note# 2

Changed reference voltage level for measurement of Hi-Z parameters from

±500 mV to ±200 mV

Added Data Retention Characteristics/Waveform and footnotes 11 and 12

Changed Package Diagram name from 44-pin TSOP II Z44 to 44-pin TSOP

II ZS44

Changed part names from Z to ZS in the Ordering Information Table

Added 8 ns parts in the Ordering Information Table

Added Lead-Free Ordering Information

Shaded Ordering Information Table

*C

446328 See ECN NXR Converted from Preliminary to Final

Removed -8 speed bin

Removed Commercial Operating Range product information

Added Automotive Operating Range product information

Updated Thermal Resistance table

Updated footnote #8 on High-Z parameter measurement

Replaced Package Name column with Package Diagram in the Ordering

Information table

Document #: 38-05475 Rev. *C

Page 8 of 8

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