CY7C1049DV33(2006) 데이터 시트보기 (PDF) - Cypress Semiconductor
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CY7C1049DV33 Datasheet PDF : 8 Pages
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CY7C1049DV33
Data Retention Characteristics Over the Operating Range
Parameter
Description
Conditions [13]
Min. Max Unit
VDR
ICCDR
tCDR[4]
tR[12]
VCC for Data Retention
2.0
Data Retention Current
VCC = VDR = 2.0V, CE > VCC – 0.3V Ind’l
VIN > VCC – 0.3V or VIN < 0.3V
Auto
Chip Deselect to Data Retention Time
0
V
10
mA
15
mA
ns
Operation Recovery Time
tRC
ns
Data Retention Waveform
DATA RETENTION MODE
VCC
3.0V
VDR > 2V
3.0V
tCDR
tR
CE
Switching Waveforms
Read Cycle No. 1[14, 15]
tRC
ADDRESS
DATA OUT
tAA
tOHA
PREVIOUS DATA VALID
DATA VALID
Read Cycle No. 2 (OE Controlled)[15, 16]
ADDRESS
tRC
CE
tACE
OE
DATA OUT
VCC
SUPPLY
CURRENT
tDOE
tLZOE
HIGH IMPEDANCE
tLZCE
tPU
50%
DATA VALID
Notes:
12. Full device operation requires linear VCC ramp from VDR to VCC(min.) > 50 µs or stable at VCC(min.) > 50 µs
13. No input may exceed VCC + 0.3V.
14. Device is continuously selected. OE, CE = VIL.
15. WE is HIGH for Read cycle.
16. Address valid prior to or coincident with CE transition LOW.
tHZOE
tHZCE
HIGH
IMPEDANCE
tPD
ICC
50%
ISB
Document #: 38-05475 Rev. *C
Page 4 of 8
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