28F160F3F3B150 데이터 시트보기 (PDF) - Intel

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28F160F3F3B150

FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT

Intel 

E

FAST BOOT BLOCK DATASHEET

1.0 INTRODUCTION

This datasheet contains 8- and 16-Mbit Fast Boot

Block memory information. Section 1.0 provides a

flash memory overview. Sections 2.0 through 8.0

describe the memory functionality and electrical

specifications for extended and automotive

temperature product offerings.

1.2 Product Overview

The Fast Boot Block flash memory family provides

density upgrades with pinout compatibility for 8- and

16-Mbit densities. This family of products are high

performance, low voltage memories with a 16-bit

data bus and individually erasable blocks. These

blocks are optimally sized for code and data

storage. Eight 4-Kword parameter blocks are

positioned at either the top (denoted by -T suffix) or

bottom (denoted by -B suffix) of the address map.

The rest of the device is grouped into

32-Kword main blocks. The upper two (or lower

two) parameter and all main blocks can be locked

for complete code protection.

The device’s optimized architecture and interface

dramatically increases read performance beyond

previously attainable levels. It supports

asynchronous page-mode and synchronous burst

reads from main blocks (parameter blocks support

single asynchronous and synchronous reads).

Upon initial power-up or return from reset, the

device defaults to a page-mode read configuration.

Page-mode read configuration is ideal for non-clock

memory systems and is compatible with page-

mode ROM. Synchronous burst reads are enabled

by writing to the read configuration register. In

synchronous burst mode, the CLK input increments

an internal burst address generator, synchronizes

the flash memory with the host CPU, and outputs

data on every rising (or falling) CLK edge up to

54 MHz (25 MHz for automotive temperature). An

output signal, WAIT#, is also provided to ease CPU

to flash memory communication and

synchronization during continuous burst operations.

In addition to the enhanced architecture and

interface, this family of products incorporates

SmartVoltage technology which enables fast factory

programming and low power designs. Specifically

designed for low voltage systems, Fast Boot Block

flash memory components support read operations

at 2.7 V (3.3 V for automotive temperature) VCC and

PRODUCT PREVIEW

block erase and program operations at 2.7 V

(3.3 V for automotive temperature) and 12 V VPP.

The 12 V VPP option renders the fastest program

performance to increase factory programming

throughput. With the 2.7 V (3.3 V for automotive

temperature) VPP option, VCC and VPP can be tied

together for a simple, low power design. In addition

to the voltage flexibility, the dedicated VPP pin gives

complete data protection when VPP ≤ VPPLK.

The flexible input/output (I/O) voltage capability

helps reduce system power consumption and

simplify interfacing to sub 2.7 V and 5 V CPUs.

Powered by VCCQ pins, the I/O buffers can operate

at a lower voltage than the flash memory core. With

VCCQ voltage at 1.65 V, the I/Os swing between

GND and 1.65 V, reducing I/O power consumption

by 65% over standard 3 V flash memory

components. The low voltage and 5 V-safe feature

also helps ease CPU interfacing by adapting to the

CPU’s bus voltage.

The device’s Command User Interface (CUI) serves

as the interface between the system processor and

internal flash memory operation. A valid command

sequence written to the CUI initiates device

automation. This automation is controlled by an

internal Write State Machine (WSM) which

automatically executes the algorithms and timings

necessary for block erase and program operations.

The status register provides WSM feedback by

signifying block erase or program completion and

status.

Block erase and program automation allows erase

and program operations to be executed using an

industry-standard two-write command sequence. A

block erase operation erases one block at a time,

and data is programmed in word increments. Erase

suspend allows system software to suspend an

ongoing block erase operation in order to read from

or program data to any other block. Program

suspend allows system software to suspend an

ongoing program operation in order to read from

any other location.

Fast Boot Block flash memory devices offer two low

power savings features: Automatic Power Savings

(APS) and standby mode. The device automatically

enters APS mode following the completion of a read

cycle. Standby mode is initiated when the system

deselects the device by driving CE# inactive or

RST# active. RST# also resets the device to read

array, provides write protection, and clears the

status register. Combined, these two features

significantly reduce power consumption.

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