EM658160 데이터 시트보기 (PDF) - Etron Technology

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EM658160

4M x 16 DDR Synchronous DRAM (SDRAM)

Etron Technology 

Et r onT ec h

4Mx16 DDR SDRAM

EM658160

Mode Register Set (MRS)

The mode register is divided into various fields depending on functionality.

• Burst Length Field (A2~A0)

This field specifies the data length of column access using the A2~A0 pins and selects the

Burst Length to be 2, 4, 8.

A2

A1

A0

Burst Length

0

0

0

Reserved

0

0

1

2

0

1

0

4

0

1

1

8

1

0

0

Reserved

1

0

1

Reserved

1

1

0

Reserved

1

1

1

Reserved

• Addressing Mode Select Field (A3)

The Addressing Mode can be one of two modes, both Interleave Mode or Sequential Mode.

Both Sequential Mode and Interleave Mode support burst length of 2,4 and 8.

A3

Addressing Mode

0

Sequential

1

Interleave

--- Addressing Sequence of Sequential Mode

An internal column address is performed by increasing the address from the column

address which is input to the device. The internal column address is varied by the Burst

Length as shown in the following table.

Data n

0 1234567

Column Address n n+1 n+2 n+3 n+4 n+5 n+6 n+7

2 words

Burst Length

4 words

8 words

Full Page (Even starting address)

--- Addressing Sequence of Interleave Mode

A column access is started in the input column address and is performed by inverting the

address bits in the sequence shown in the following table.

Data n

Column Address

Data 0 A7 A6 A5 A4 A3 A2 A1 A0

Data 1 A7 A6 A5 A4 A3 A2 A1 A0#

Data 2 A7 A6 A5 A4 A3 A2 A1# A0

Data 3 A7 A6 A5 A4 A3 A2 A1# A0#

Data 4 A7 A6 A5 A4 A3 A2# A1 A0

Data 5 A7 A6 A5 A4 A3 A2# A1 A0#

Data 6 A7 A6 A5 A4 A3 A2# A1# A0

Data 7 A7 A6 A5 A4 A3 A2# A1# A0#

Burst Length

4 words

8 words

Etron Confidential

6

Rev. 1.1

Jan. 2002

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