EM658160 데이터 시트보기 (PDF) - Etron Technology

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EM658160

4M x 16 DDR Synchronous DRAM (SDRAM)

Etron Technology 

Et r onT ec h

4Mx16 DDR SDRAM

EM658160

Absolute Maximum Rating

Symbol

VIN, VOUT

VDD, VDDQ

TOPR

TSTG

TSOLDER

PD

IOUT

Item

Input, Output Voltage

Power Supply Voltage

Operating Temperature

Storage Temperature

Soldering Temperature (10s)

Power Dissipation

Short Circuit Output Current

Rating

- 0.3~ VDD + 0.3

- 0.3~3.6

0~70

- 55~150

260

1

50

Unit

Note

V

1

V

1

°C

1

°C

1

°C

1

W

1

mA

1

Recommended D.C. Operating Conditions (Ta = 0 ~ 70 °C)

Parameter

Power Supply Voltage

Power Supply Voltage (for I/O Buffer)

Input Reference Voltage

Termination Voltage

Input High Voltage (DC)

Input Low Voltage (DC)

Input Voltage Level, CLK and CLK#

inputs

Input Different Voltage, CLK and CLK#

inputs

Input leakage current

Output leakage current

Output High Voltage

Output Low Voltage

Symbol

VDD

VDDQ

VREF

VTT

VIH (DC)

VIL (DC)

VIN (DC)

Min.

3.0

2.3

1.15

VREF - 0.04

VREF + 0.18

-0.3

-0.3

Max.

3.6

2.7

1.35

VREF + 0.04

VDDQ + 0.3

VREF – 0.18

VDDQ + 0.3

Unit

V

V

V

V

V

V

V

VID (DC)

-0.36

VDDQ + 0.6

V

II

-5

5

µA

IOZ

-5

5

µA

VOH

VTT + 0.76

-

V

VOL

VTT – 0.76

V

Note

IOH = -15.2 mA

IOL = +15.2 mA

Etron Confidential

8

Rev. 1.1

Jan. 2002

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