EM658160 데이터 시트보기 (PDF) - Etron Technology
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EM658160 Datasheet PDF : 26 Pages
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Et r onT ec h
4Mx16 DDR SDRAM
EM658160
Capacitance (VDD = 3.3V, f = 1MHz, Ta = 25 °C)
Symbol
CIN
CI/O
Parameter
Input Capacitance (except for CK pin)
Input Capacitance (CK pin)
DQ, DQS, DM Capacitance
Min.
Max.
Unit
2.5
5
pF
2.5
4
pF
4
6.5
pF
Note: These parameters are periodically sampled and are not 100% tested.
Recommended D.C. Operating Conditions (VDD = 3.3V ± 0.3, Ta = 0~70 °C)
Parameter
Operation Current
(one bank active)
Symbol
IDD0
tRC = min, tCK = min
Active-precharge
Max.
- 3.3/3.5/4/5/6/7/8
UNIT
250/240/230/220/190/180/160
Operation Current
(one bank active)
IDD1
Burst = 2, tRC = min, CL = 3
IOUT = 0mA, Active-Read-Precharge
320/300/260/250/220/210/200
Precharge Power-
down Standby Current
IDD2P
CKE ≤ VIL(max), tCK = min,
All banks idle
80/80/80/65/65/60/55
Idel Standby Current
Active Power-down
Standby Current
Active Standby
Current
IDD2N
IDD3P
IDD3N
CKE ≥ VIH(min), CS# ≥ VIH(min),
tCK = min
All banks ACT, CKE ≤ VIL(max),
tCK = min
One bank; Active-Precharge,
tRC = tRAS(max), tCK = min
170/160/150/130/110/100/90
80/80/80/65/65/60/55
mA
180/170/160/155/145/140/135
Operation Current
(Read)
IDD4R
Burst = 2, CL = 3, tCK = min,
IOUT = 0mA
330/310/270/250/220/200/180
Operation Current
(Write)
IDD4W Burst = 2, CL = 3, tCK = min
330/310/270/250/220/200/180
Auto Refresh Current
IDD5 tRC(min)
190/180/170/155/145/140/135
Self Refresh Current
IDD6 CKE ≤ 0.2v
2
Etron Confidential
9
Rev. 1.1
Jan. 2002
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