VS-FB190SA10 데이터 시트보기 (PDF) - Vishay Semiconductors

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VS-FB190SA10

Power MOSFET, 190 A

Vishay Semiconductors 

VS-FB190SA10

Vishay Semiconductors

Power MOSFET, 190 A

Current regulator

Same type as D.U.T.

12 V

50 kΩ

0.2 µF

0.3 µF

D.U.T.

+

- VDS

VGS

3 mA

IG

ID

Current sampling resistors

Fig. 13b - Gate Charge Test Circuit

D.U.T.

+

2

-

+

Circuit layout considerations

• Low stray inductance

3

• Ground plane

• Low leakage inductance

current transformer

-

4

-

+

1

RG

• dV/dt controlled by RG

• Driver same type as D.U.T.

• ISD controlled by duty factor "D"

• D.U.T. - Device under test

+

- VDD

Fig. 13c - Peak Diode Recovery dV/dt Test Circuit

Driver Gate Drive

P.W.

Period

D=

P.W.

Period

VGS=10V *

D.U.T. ISD Waveform

Reverse

Recovery

Body Diode Forward

Current

Current

di/dt

D.U.T. VDS Waveform

Diode Recovery

dv/dt

VDD

Re-Applied

Voltage

Body Diode

Inductor Curent

Forward Drop

Ripple ≤ 5%

ISD

* VGS = 5V for Logic Level Devices

Fig. 14 - For N-Channel Power MOSFETs

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For technical questions, contact: indmodules@vishay.com

Document Number: 93459

Revision: 12-Apr-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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