FDC6036P 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDC6036P Datasheet PDF : 7 Pages
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Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
∆TJ
Drain–Source BreakdownVoltage VGS = 0 V,
ID = –250 µA
–20
Breakdown Voltage Temperature ID = –250 µA, Referenced to 25°C
–24
Coefficient
V
mV/°C
IDSS
Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V
–1
µA
IGSS
Gate–Body Leakage
VGS = ±8 V,
VDS = 0 V
±100 nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
gfs
Forward Transconductance
VDS = VGS,
ID = –250 µA
ID = –250 µA, Referenced to 25°C
–0.4
–0.7
4.4
–1.5
V
mV/°C
VGS = –4.5 V, ID = –5.0 A
VGS = –2.5 V, ID = –4.0 A
VGS = –1.8 V, ID = –3.2 A
VGS = –4.5 V,ID = –5 A,TJ=125°C
VDS = –5 V,
ID = –5 A
37
44
mΩ
52
64
74
95
51
61
16
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = –10 V,
f = 1.0 MHz
VGS = 0 V,
V GS = 15 mV f = 1.0 MHz
992
pF
169
pF
85
pF
8.6
mΩ
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDD = –10 V, ID = –1 A,
VGS = –4.5 V, RGEN = 6 Ω
VDS = –10 V,
VGS = –4.5 V
ID = –5 A,
12
24
ns
10
20
ns
40
64
ns
20
36
ns
10
14
nC
1.7
nC
2.0
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = –1.25 A (Note 2)
trr
Diode Reverse Recovery Time IF = –5 A,
Qrr
Diode Reverse Recovery Charge diF/dt = 100 A/µs
–1.25
A
–0.7 –1.2
V
19
ns
7.8
nC
FDC6036P Rev C2 (W)
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