FDC6000NZ 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDC6000NZ Datasheet PDF : 7 Pages
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June 2004
FDC6000NZ
Dual N-Channel 2.5V Specified PowerTrench MOSFET
General Description
This N-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild's Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 12V). Packaged in FLMP SSOT-6,
the RDS(ON) and thermal properties of the device are
optimized for battery power management applications.
Applications
• Battery management/Charger Application
• Load switch
Features
• 6.5 A, 20 V RDS(ON) = 20 mΩ @ VGS = 4.5 V
RDS(ON) = 28 mΩ @ VGS = 2.5 V
• ESD protection diode (note 3)
• High performance trench technology for extremely
low RDS(ON)
• FLMP SSOT-6 package: Enhanced thermal
performance in industry-standard package size
S2
S1
G1
SuperSOT-6TM FLMP
G2
S2
S1
MOSFET Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Dual Operation
(Note 1a)
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJc
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.0NZ
FDC6000NZ
7’’
2004 Fairchild Semiconductor Corporation
Bottom Drain Contact
4
3
5
2
6
1
Bottom Drain Contact
Ratings
20
±12
7.3
20
1.6
1.8
1.2
–55 to +150
68
1
Tape width
8mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
FDC6000NZ Rev E1 (W)
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