FDC6000NZ_F077 데이터 시트보기 (PDF) - Fairchild Semiconductor
부품명
상세내역
제조사
FDC6000NZ_F077 Datasheet PDF : 7 Pages
| |||
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
∆BVDSS
∆TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSS
Gate–Body Leakage
VGS = 0 V,
ID = 250 µA
20
ID = 250 µA, Referenced to 25°C
VDS = 16 V,
VGS = ±12 V,
VGS = 0 V
VDS = 0 V
V
14
mV/°C
1
µA
± 10 µA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
gFS
Forward Transconductance
VDS = VGS,
ID = 250 µA
0.6
ID = 250 µA, Referenced to 25°C
0.9 1.5
V
–4
mV/°C
VGS = 4.5 V, ID = 6.5 A
VGS = 4.0 V, ID = 6.4 A
VGS = 3.1 V, ID = 6.3 A
VGS = 2.5 V, ID = 5.5 A
VGS = 4.5 V, ID = 6.5A, TJ=125°C
VDS = 5 V,
ID = 6.5 A
16.5 20
mΩ
16.8 21
19.2 24
22.5 28
22.8 30
30
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
VDS = 10 V,
f = 1.0 MHz
V GS = 0 V,
VGS = 15 mV, f = 1.0 MHz
840
pF
210
pF
100
pF
2.3
Ω
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDD = 10 V,
VGS = 4.5 V,
ID = 1 A,
RGEN = 6 Ω
VDS = 10 V,
VGS = 4.5 V
ID = 6.5 A,
10 20
ns
15 27
ns
18 32
ns
9
18
ns
8
11
nC
1.5
nC
2.1
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward Voltage VGS = 0 V, IS = 1.25A (Note 2)
1.25
A
0.7 1.2
V
FDC6000NZ RevE1 (W)
Share Link: 