FDD6296 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDD6296 Datasheet PDF : 6 Pages
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Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Drain-Source Avalanche Ratings (Note 2)
EAS
Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID=15A
IAS
Drain-Source Avalanche Current
Off Characteristics
BVDSS
Drain–Source Breakdown
Voltage
VGS = 0 V,
ID = 250 µA
∆BVDSS
∆TJ
IDSS
Breakdown Voltage Temperature ID = 250 µA, Referenced to 25°C
Coefficient
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V
IGSS
Gate–Body Leakage
VGS =± 20 V, VDS = 0 V
On Characteristics (Note 2)
VGS(th)
∆VGS(th)
∆TJ
RDS(on)
gFS
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
Forward Transconductance
VDS = VGS,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 10 V, ID = 15 A
VGS = 4.5 V, ID = 13 A
VGS = 10 V, ID = 15 A, TJ=125°C
VDS = 5 V,
ID = 15 A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
VGS = 15 mV, f = 1.0 MHz
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
VDD = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 Ω
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qg
Total Gate Charge
Qgs
Gate–Source Charge
VDS = 15V, ID = 15 A, VGS = 10 V
VDS = 15V,
VGS = 5 V
ID = 15 A,
Qgd
Gate–Drain Charge
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 3.2 A (Note 2)
trr
Diode Reverse Recovery Time IF = 15 A,
Qrr
Diode Reverse Recovery Charge diF/dt = 100 A/µs
Min Typ Max Units
165 mJ
15
A
30
29
V
mV/°C
1
µA
±
100
nA
1 1.7 3
V
–0.5
mV/°C
7.5 8.8 mΩ
9.0 11.3
9.3 15.0
58
S
1440
pF
400
pF
140
pF
1.3
Ω
11 19
ns
6 11
ns
29 46
ns
13 23
ns
22.5 31.5 nC
12.2 17
nC
4
nC
3.5
nC
3.2
A
0.74 1.2
V
25
nS
13
nC
FDD6296/FDU6296 Rev. C(W)
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