FFPF20UP30DNTU 데이터 시트보기 (PDF) - Fairchild Semiconductor

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FFPF20UP30DNTU

20 A, 300 V, Ultrafast Dual Diode

Fairchild Semiconductor 

Electrical Characteristics (per diode) Ta = 25°C unless otherwise noted

Symbol

Parameter

VF *

IR *

trr

ta

tb

Qrr

WAVL

IF = 10 A

IF = 10 A

VR = 300 V

VR = 300 V

IF = 1 A, diF/dt = 100 A/µs, VR = 30 V IF

= 10 A, diF/dt = 200 A/µs, VR = 195 V

IF =10 A, diF/dt = 200 A/µs, VR = 195 V

Avalanche Energy (L = 20 mH)

TC = 25 °C

TC = 150 °C

TC = 25 °C

TC = 150 °C

TC = 25 °C

TC = 25 °C

TC = 25 °C

TC = 25 °C

TC = 25 °C

*Pulse Test: Pulse Width=300 µs, Duty Cycle=2%

Min.

-

-

-

-

-

-

-

-

-

20

Typ.

-

-

-

-

-

-

11

13

20

-

Max.

1.3

1.2

100

500

35

45

-

-

-

-

Unit

V

V

µA

µA

ns

ns

ns

ns

nC

mJ

Test Circuit and Waveforms

Figure 1. Diode Reverse Recovery Test Circuit & Waveform

Figure 2. Unclamped Inductive Switching Test Circuit & Waveform

©2005 Fairchild Semiconductor Corporation

2

FFPF20UP30DN Rev. C1

www.fairchildsemi.com

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