FQD5N15TM(2013) 데이터 시트보기 (PDF) - Fairchild Semiconductor

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FQD5N15TM
(Rev.:2013)

N-Channel QFET® MOSFET

Fairchild Semiconductor 

FQD5N15

N-Channel QFET® MOSFET

150 V, 4.3 A, 800 mΩ

November 2013

Description

This N-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductor’s proprietary

planar stripe and DMOS technology. This advanced

MOSFET technology has been especially tailored to

reduce on-state resistance, and to provide superior

switching performance and high avalanche energy

strength. These devices are suitable for switched mode

power supplies, audio amplifier, DC motor control, and

variable switching power applications.

Features

• 4.3 A, 150 V, RDS(on) = 800 mΩ (Max.) @ VGS = 10 V,

ID = 2.15 A

• Low Gate Charge (Typ. 5.4 nC)

• Low Crss (Typ. 7.5 pF)

• 100% Avalanche Tested

D

D

G

S

D-PAK

G

Absolute Maximum Ratings TC = 25oC unless otherwise noted.



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Thermal Characteristics

Symbol

Parameter

RJC

RJA

Thermal Resistance, Junction to Case, Max.

Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.

Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max.

FQD5N15TM

4.17

110

50

Unit

oC/W

©2000 Fairchild Semiconductor Corporation

1

FQD5N15 Rev. C0

www.fairchildsemi.com

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