G2300 데이터 시트보기 (PDF) - GTM CORPORATION
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G2300 Datasheet PDF : 4 Pages
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Pb Free Plating Product
ISSUED DATE :2006/07/26
REVISED DATE :2006/11/09B
G2300
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
Description
The G2300 provide the designer with best combination of fast switching, low on-resistance and
cost-effectiveness.
The G2300 is universally used for all commercial-industrial surface mount applications.
20V
28m
6A
Features
*Low on-resistance
*Capable of 2.5V gate drive
*Small Package Outline
Package Dimensions
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1,2
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 Max.
Symbol
Rthj-a
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0
0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0°
10°
Ratings
20
±8
6
4.8
20
1.25
0.01
-55 ~ +150
Value
100
Unit
V
V
A
A
A
W
W/
Unit
/W
1/4
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