GFB70N03 데이터 시트보기 (PDF) - General Semiconductor

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GFB70N03

N-Channel Enhancement-Mode MOSFET

General Semiconductor 

GFB70N03

N-Channel Enhancement-Mode MOSFET

TGREENNCFHET®

VDS 30V RDS(ON) 8mΩ ID 70A

D

G

TO-263AB

0.380 (9.65)

0.420 (10.67)

0.21 (5.33)

Min.

D

0.160 (4.06)

0.190 (4.83)

0.045 (1.14)

0.055 (1.40)

S

0.42

(10.66)

0.320 (8.13)

0.360 (9.14)

PIN

GDS

Seating Plate

-T-

0.096 (2.43)

0.102 (2.59)

0.027 (0.686)

0.037 (0.940)

0.575 (14.60)

0.625 (15.88)

0.120 (3.05)

0.155 (3.94)

0.055 (1.39)

0.066 (1.68)

Dimensions in inches

and (millimeters)

0.014 (0.35)

0.020 (0.51)

0.100 (2.54)

0.130 (3.30)

0.63

(17.02)

0.33

(8.38)

Mounting Pad

Layout

0.08

(2.032)

0.24

(6.096)

0.12

(3.05)

Mechanical Data

Case: JEDEC TO-263 molded plastic body

Terminals: Leads solderable per MIL-STD-750,

Method 2026

High temperature soldering guaranteed:

250°C/10 seconds at terminals

Mounting Position: Any Weight: 1.3g

Features

• Advanced Trench Process Technology

• High Density Cell Design for Ultra Low On-Resistance

• Specially Designed for Low Voltage DC/DC Converters

• Fast Switching for High Efficiency

Maximum Ratings and Thermal Characteristics (TC = 25°C unless otherwise noted)

Parameter

Symbol

Limit

Drain-Source Voltage

VDS

30

Gate-Source Voltage

Continuous Drain Current(1)

VGS

± 20

ID

70

Pulsed Drain Current

IDM

200

Maximum Power Dissipation

TC = 25°C

TC = 100°C

PD

62.5

25

Operating Junction and Storage Temperature Range

TJ, Tstg

–55 to 150

Lead Temperature (1/8” from case for 5 sec.)

TL

275

Junction-to-Case Thermal Resistance

Junction-to-Ambient Thermal Resistance(2)

RθJC

2.0

RθJA

40

Notes: (1) Maximum DC current limited by the package

(2) 1-in2 2oz. Cu PCB mounted

Unit

V

A

W

°C

°C

°C/W

°C/W

5/16/01

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