GT28F400B3B150 데이터 시트보기 (PDF) - Intel

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GT28F400B3B150

SMART 3 ADVANCED BOOT BLOCK WORD-WIDE 4-MBIT (256K X 16), 8-MBIT (512K X 16), 16-MBIT (1024K X 16) FLASH MEMORY FAMILY

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SMART 3 ADVANCED BOOT BLOCK–WORD-WIDE

Table 10. DC Characteristics (Continued)

Sym

Parameter

Notes VCC = 2.7V–3.6V Unit

Test Conditions

Typ Max

IPPW VPP Program Current

1,4

15

40

mA VPP = VPPH1 (3V)

Program in Progress

10

25

mA VPP = VPPH2 (12V)

Program in Progress

IPPE VPP Erase Current

1,4

13

25

mA VPP = VPPH1 (3V)

Erase in Progress

8

25

mA VPP = VPPH2 (12V)

Erase in Progress

IPPES VPP Erase Suspend

Current

1,4

50

200

µA VPP = VPPH1 or VPPH2

Erase Suspend in Progress

IPPWS VPP Program Suspend

1,4

50

200

µA VPP = VPPH1 or VPPH2

Current

Program Suspend in Progress

PRELIMINARY

31

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