HM64YLB36514BP-6H 데이터 시트보기 (PDF) - Renesas Electronics

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HM64YLB36514BP-6H

16M Synchronous Late Write Fast Static RAM (512-kword × 36-bit, Register-Latch Mode)

Renesas Electronics 

HM64YLB36514 Series

Input Capacitance (VDD = 2.5 V, VDDQ = 1.5 V, Ta = +25°C, f = 1 MHz)

Parameter

Symbol Min Max Unit Pin name

Input capacitance

C

IN

 4 pF SAn, SS, SWE, SWEx

Clock input capacitance

CCLK

 5 pF K, K

I/O capacitance

CIO

 5 pF DQxn

Notes: 1. This parameter is sampled and not 100% tested.

2. Exclude G

3. Connect pins to GND, except VDD, VDDQ, and the measured pin.

Notes

1, 3

1, 2, 3

1, 3

AC Test Conditions

Parameter

Symbol Conditions

Input and output timing reference levels

Input signal amplitude

Input rise / fall time

VREF

VIL, VIH

tr, tf

0.75

0.25 to 1.25

0.5 (10% to 90%)

Clock input timing reference level

Differential cross point

VDIF to clock

VCM to clock

Output loading conditions

0.75

1.10

See figure below

Note:

Parameters

are

tested

with

RQ

=

250

Ω

and

V

DDQ

=

1.5

V.

Unit Note

V

V

ns

V

V

Output Loading Conditions

16.7 Ω

DQ

16.7 Ω

16.7 Ω

50 Ω

50 Ω

5 pF

5 pF

0.75 V

50 Ω

0.75 V

50 Ω

0.75 V

Rev.0.10, May.15.2003, page 15 of 22

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