HM64YLB36514 데이터 시트보기 (PDF) - Renesas Electronics

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HM64YLB36514

16M Synchronous Late Write Fast Static RAM (512-kword × 36-bit, Register-Latch Mode)

Renesas Electronics 

HM64YLB36514 Series

DC Characteristics (Ta = 0 to +85°C, VDD = 2.5 V ± 5%)

Parameter

Input leakage current

Output leakage current

Standby current

VDD operating current, excluding output drivers

Quiescent active power supply current

Maximum power dissipation, including output drivers

Symbol

I

LI

ILO

ISBZZ

IDD

IDD2

P

Min Max Unit Notes

2

µA 1

5

µA 2

 150 mA 3

 350 mA 4

 200 mA 5

 2.3 W 6

Parameter

Symbol

Min

Typ

Max

Unit Notes

Output low voltage

VOL

Output high voltage

VOH

ZQ pin connect resistance RQ

VSS



VDDQ − 0.4





250

VSS + 0.4

VDDQ



V7

V8

Ω

Output “Low” current

IOL

(VDDQ/2)/{(RQ/5) − 15%}

(VDDQ/2)/{(RQ/5) + 15%} mA 9, 11

Output “High” current

I

OH

(V /2)/{(RQ/5) + 15%}

DDQ

(V /2)/{(RQ/5)

DDQ

−

15%}

mA

10, 11

Notes:

1.

0

≤

V

IN

≤

V

DDQ

for

all

input

pins

(except

V,

REF

ZQ,

M1,

M2

pin)

2. 0 ≤ VOUT ≤ VDDQ, DQ in high-Z

3. All inputs (except clock) are held at either VIH or VIL, ZZ is held at VIH, IOUT = 0 mA. Specification

is guaranteed at +75°C junction temperature.

4. IOUT = 0 mA, read 50% / write 50%, VDD = VDD max, frequency = min. cycle

5. IOUT = 0 mA, read 50% / write 50%, VDD = VDD max, frequency = 3 MHz

6. Output drives a 12 pF load and switches every cycle. This parameter should be used by the

SRAM designer to determine electrical and package requirements for the SRAM device.

7.

RQ

=

250

Ω,

I

OL

=

6.8

mA

8. RQ = 250 Ω, IOH = −6.8 mA

9. Measured at VOL = 1/2 VDDQ

10. Measured at V = 1/2 V

OH

DDQ

11. The total external capacitance of ZQ pin must be less than 7.5 pF.

Rev.0.10, May.15.2003, page 9 of 22

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