IDT6167LA55YB 데이터 시트보기 (PDF) - Integrated Device Technology

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IDT6167LA55YB

CMOS STATIC RAM 16K (16K x 1-BIT)

Integrated Device Technology 

IDT6167SA/LA

CMOS STATIC RAM 16K (16K x 1-BIT)

DC ELECTRICAL CHARACTERISTICS

VCC = 5.0V ± 10%

Symbol

|ILI|

|ILO|

VOL

VOH

Parameter

Input Leakage Current

Output Leakage Current

Output Low Voltage

Output High Voltage

Test Condition

VCC = Max.,

VIN = GND to VCC

VCC = Max., CS = VIH,

VOUT = GND to VCC

IOL = 8mA, VCC = Min.

IOH = –4mA, VCC = Min.

MIL

COM’L

MIL

COM’L

MILITARY AND COMMERCIAL TEMPERATURE RANGES

IDT6167SA

Min.

Max.

—

10

—

5

—

10

—

5

—

0.4

2.4

—

IDT6167LA

Min.

Max.

—

5

—

2

—

5

—

2

—

0.4

2.4

—

Unit

µA

µA

V

V

2981 tbl 08

DATA RETENTION CHARACTERISTICS OVER ALL TEMPERATURE RANGES

(LA Version Only) VLC = 0.2V, VHC = VCC – 0.2V

Typ. (1)

VCC @

Max.

VCC @

Symbol

Parameter

Test Condition

Min.

2.0v

3.0V

2.0V

3.0V

VDR

VCC for Data Retention

—

2.0

—

—

—

—

ICCDR

Data Retention Current

MIL.

—

0.5

1.0

200

300

COM’L. —

0.5

1.0

20

30

tCDR

Chip Deselect to Data

CS ≥ VHC

0

—

—

—

—

Retention Time

VIN ≥ VHC or ≤ VLC

tR(3)

Operation Recovery Time

tRC(2)

—

—

—

—

|ILI|(3)

Input Leakage Current

—

—

—

—

2

2

NOTES:

1. TA = +25°C.

2. tRC = Read Cycle Time.

3. This parameter is guaranteed by device characterization, but is not production tested.

Unit

V

µA

ns

ns

µA

2981 tbl 09

LOW VCC DATA RETENTION WAVEFORM

DATA

RETENTION

MODE

VCC

4.5V

VDR ≥ 2V

tCDR

CS

VDR

VIH

4.5V

tR

VIH

2981 drw 03

5.2

4

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