IDT6168SA45 데이터 시트보기 (PDF) - Integrated Device Technology
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IDT6168SA45 Datasheet PDF : 7 Pages
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IDT6168SA/LA
CMOS STATIC RAM 16K (4K x 4-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
AC ELECTRICAL CHARACTERISTICS (CONTINUED) (VCC = 5.0V ± 10%, All Temperature Ranges)
6168SA15
6168SA20/25
6168LA20/25
6168SA35
6168LA35
Symbol
Parameter
Min. Max. Min. Max. Min. Max.
Read Cycle
tRC
Read Cycle Time
15 — 20/25 — 35 —
tAA
Address Access Time
— 15
— 20/25 — 35
tACS
tCLZ(2)
tCHZ(2)
Chip Select Access Time
Chip Select to Output in Low-Z
Chip Deselect to Output in High-Z
— 15
3—
—8
— 20/25 — 35
5
—
5
—
— 10 — 15
tOH
tPU(2)
tPD(2)
Output Hold from Address Change
Chip Select to Power-Up Time
Chip Deselect to Power-Down Time
3—
0—
— 35
3
—
3
—
0
—
0
—
— 20/25 — 35
NOTES:
1. –55°C to +125°C temperature range only.
2. This parameter is guaranteed with AC Test load (Figure 2) by device characterization, but is not production tested.
6168SA45(1)
6168LA45(1)
Min. Max.
Unit
45 — ns
— 45 ns
— 45 ns
5 — ns
— 25 ns
3 — ns
0 — ns
— 40 ns
3090 tbl 12
TIMING WAVEFORM OF READ CYCLE NO. 1(1, 2)
tRC
ADDRESS
DATAOUT
tAA
tOH
PREVIOUS DATA VALID
TIMING WAVEFORM OF READ CYCLE NO. 2(1, 3)
tRC
CS
DATAOUT
VCC
ICC
SUPPLY
CURRENT
ISB
tACS
tCLZ (4)
HIGH IMPEDANCE
tPU
NOTES:
1. WE is HIGH for Read cycle.
2. CS is LOW for Read cycle.
3. Device is continuously selected, CS is LOW.
3. Address valid prior to or coincident with CS transition LOW.
4. Transition is measured ±200mV from steady state.
DATA VALID
3090 drw 06
(3)
tCHZ
DATAOUT VALID
tPD
HIGH IMPEDANCE
3090 drw 07
5.3
5
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