DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

IFX1117GSV33(2009) 데이터 시트보기 (PDF) - Infineon Technologies

부품명
상세내역
제조사
IFX1117GSV33
(Rev.:2009)
Infineon
Infineon Technologies Infineon
IFX1117GSV33 Datasheet PDF : 15 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
IFX 1117
Characteristics 3.3 V Fixed Output Voltage Device IFX 1117 GSV33
0 °C < Tj < 125 °C; VI = 5 V, IQ = 10 mA; unless otherwise specified.
Parameter
Symbol Limit Values Unit Measuring Conditions
min. typ. max.
Output voltage
VQ
Output voltage
VQ
Line regulation
VQ
Load regulation
VQ
Drop voltage
VDR
Drop voltage
VDR
Drop voltage
VDR
Drop voltage
VDR
Current consumption; Iq
Iq = II IQ
Temperature stability VQ
Long Term Stability –
3.23 3.300 3.36 V
5
5
– 3.300 – V
–1
6 mV
–1
10 mV
–2
– mV
– 1.00 1.10 V
– 1.05 1.15 V
– 1.10 1.20 V
– 1.30 1.40 V
–5
10 mA
0 mA IQ 800 mA
4.7 V VI 10 V
0 mA IQ 1000 mA;
4.7 V VI 15V
4.7 V VI 15V
0 mA IQ 800 mA;1)
0 mA IQ 1.0 A1)
IQ = 100 mA2)
IQ = 500 mA2)
IQ = 800 mA2)
IQ = 1.0 A2)
IQ = 10 mA
16.5 –
mV 3)
0.3 –
%
3)
Current limit
RMS Output Noise
IQmax
1100 –
– 30
Power Supply Ripple PSRR 60 65
Rejection
2250 mA
– ppm
– dB
VQ = 0.5 V
ppm of VQ, Tj = 25 °C
10 Hz f 10 kHz3)
fr = 120 Hz, Vr = 1 VPP3)
1) Measured at constant junction temperature
2) Drop voltage measured when the output voltage has dropped 100 mV from the nominal value
obtained at VI = 5.0 V.
3) Specified by design; not subject to production test.
Data Sheet
6
Rev. 1.21, 2009-09-04

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]