SIHFR9014-E3 데이터 시트보기 (PDF) - Kersemi Electronic Co., Ltd.

부품명

상세내역

제조사

SIHFR9014-E3

Power MOSFET

Kersemi Electronic Co., Ltd. 

IRFR9014, IRFU9014, SiHFR9014, SiHFU9014

D.U.T.

+

-

Peak Diode Recovery dV/dt Test Circuit

+

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

-

RG

• dV/dt controlled by RG

+

• ISD controlled by duty factor "D"

• D.U.T. - device under test

- VDD

Compliment N-Channel of D.U.T. for driver

Driver gate drive

P.W.

Period

D=

P.W.

Period

VGS = - 10 V*

D.U.T. ISD waveform

Reverse

recovery

Body diode forward

current

current

dI/dt

D.U.T. VDS waveform

Diode recovery

dV/dt

VDD

Re-applied

voltage

Body diode forward drop

Inductor current

Ripple ≤ 5 %

ISD

* VGS = - 5 V for logic level and - 3 V drive devices

Fig. 14 - For P-Channel

www.kersemi.com

7

Share Link: