IS62WV5128BLL-55T2I 데이터 시트보기 (PDF) - Integrated Silicon Solution

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IS62WV5128BLL-55T2I

512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

Integrated Silicon Solution 

IS62WV5128ALL, IS62WV5128BLL

OPERATING RANGE (VDD)

Range

Commercial

Industrial

Ambient Temperature

0°C to +70°C

–40°C to +85°C

IS62WV5128ALL

1.65V - 2.2V

1.65V - 2.2V

IS62WV5128BLL

2.5V - 3.6V

2.5V - 3.6V

ABSOLUTE MAXIMUM RATINGS(1)

Symbol

Parameter

Value

Unit

VTERM

Terminal Voltage with Respect to GND

–0.2 to VDD+0.3

V

VDD

VDD Related to GND

–0.2 to VDD+0.3

V

TSTG

Storage Temperature

–65 to +150

°C

PT

Power Dissipation

1.0

W

Note:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is

a stress rating only and functional operation of the device at these or any other conditions above those indicated in the

operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods

may affect reliability.

DC ELECTRICAL CHARACTERISTICS (Over Operating Range)

Symbol Parameter

Test Conditions

VDD

VOH

Output HIGH Voltage

IOH = -0.1 mA

IOH = -1 mA

1.65-2.2V

2.5-3.6V

VOL

Output LOW Voltage

IOL = 0.1 mA

IOL = 2.1 mA

1.65-2.2V

2.5-3.6V

VIH

Input HIGH Voltage

1.65-2.2V

2.5-3.6V

VIL(1)

Input LOW Voltage

1.65-2.2V

2.5-3.6V

ILI

Input Leakage

GND ≤ VIN ≤ VDD

ILO

Output Leakage

GND ≤ VOUT ≤ VDD, Outputs Disabled

Notes:

1. VIL (min.) = –1.0V for pulse width less than 10 ns.

Min.

Max.

Unit

1.4

—

V

2.2

—

V

—

0.2

V

—

0.4

V

1.4

VDD + 0.2

V

2.2

VDD + 0.3

V

–0.2

0.4

V

–0.2

0.6

V

–1

1

µA

–1

1

µA

4

Integrated Silicon Solution, Inc. — www.issi.com

Rev. E

01/29/08

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