IS62WV6416BLL-55TLI 데이터 시트보기 (PDF) - Integrated Silicon Solution

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IS62WV6416BLL-55TLI

64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

Integrated Silicon Solution 

IS62WV6416ALL, IS62WV6416BLL

ISSI ®

DC ELECTRICAL CHARACTERISTICS (Over Operating Range)

Symbol Parameter

Test Conditions

VDD

VOH

Output HIGH Voltage

IOH = -0.1 mA

IOH = -1 mA

1.7-2.2V

2.5-3.6V

VOL

Output LOW Voltage

IOL = 0.1 mA

IOL = 2.1 mA

1.7-2.2V

2.5-3.6V

VIH

Input HIGH Voltage

1.7-2.2V

2.5-3.6V

VIL(1)

Input LOW Voltage

1.7-2.2V

2.5-3.6V

ILI

Input Leakage

GND ≤ VIN ≤ VDD

ILO

Output Leakage

GND ≤ VOUT ≤ VDD, Outputs Disabled

Notes:

1. VIL (min.) = –1.0V for pulse width less than 10 ns.

Min.

Max.

Unit

1.4

—

V

2.2

—

V

—

0.2

V

—

0.4

V

1.4

VDD + 0.2

V

2.2

VDD + 0.3

V

–0.2

0.4

V

–0.2

0.6

V

–1

1

µA

–1

1

µA

CAPACITANCE(1)

Symbol Parameter

Conditions

Max.

Unit

CIN

Input Capacitance

VIN = 0V

8

pF

COUT

Input/Output Capacitance

VOUT = 0V

10

pF

Note:

1. Tested initially and after any design or process changes that may affect these parameters.

4

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. B

06/03/05

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