IS62WV51216ALL-70XI 데이터 시트보기 (PDF) - Integrated Silicon Solution

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IS62WV51216ALL-70XI

512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

Integrated Silicon Solution 

IS62WV51216ALL, IS62WV51216BLL

ISSI ®

ABSOLUTE MAXIMUM RATINGS(1)

Symbol

Parameter

Value

Unit

VTERM

Terminal Voltage with Respect to GND

–0.2 to VDD+0.3

V

TBIAS

Temperature Under Bias

–40 to +85

°C

VDD

VDD Related to GND

–0.2 to +3.8

V

TSTG

Storage Temperature

–65 to +150

°C

PT

Power Dissipation

1.0

W

Note:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the

device. This is a stress rating only and functional operation of the device at these or any other conditions above

those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect reliability.

DC ELECTRICAL CHARACTERISTICS (Over Operating Range)

Symbol Parameter

Test Conditions

VDD

Min.

Max.

Unit

VOH

Output HIGH Voltage

IOH = -0.1 mA

1.65-2.2V

1.4

—

V

IOH = -1 mA

2.5-3.6V

2.2

—

V

VOL

Output LOW Voltage

IOL = 0.1 mA

IOL = 2.1 mA

1.65-2.2V

—

0.2

V

2.5-3.6V

—

0.4

V

VIH

Input HIGH Voltage

1.65-2.2V

2.5-3.6V

1.4

VDD + 0.2

V

2.2

VDD + 0.3

V

VIL(1)

Input LOW Voltage

1.65-2.2V

–0.2

0.4

V

2.5-3.6V

–0.2

0.6

V

ILI

Input Leakage

GND ≤ VIN ≤ VDD

–1

1

µA

ILO

Output Leakage

GND ≤ VOUT ≤ VDD, Outputs Disabled

–1

1

µA

Notes:

1. VIL (min.) = –1.0V for pulse width less than 10 ns.

4

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. B

02/24/05

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